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| (R) BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR s s MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s 1 2 TO-3 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is intented for use in power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K R2 Typ. = 55 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO VEBO IC ICM IB P tot Tstg Tj Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c 25 C o Value 100 100 5 12 18 0.2 120 -65 to 200 200 Unit V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C October 1999 1/4 BDX87C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.45 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO IEBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CB = 100 V V CE = 50 V V EB = 5 V I C = 100 mA 100 T case = 150 o C Min. Typ. Max. 0.5 5 1 1 Unit mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) VCE(sat) V BE(sat) V BE h FE Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage DC Current Gain IC = 6 A I C = 12 A I C = 12 A IC = 6 A IC = 5 A IC = 6 A I C = 12 A IF = 3 A IF = 8 A IC = 5 A f = 1MHz I B = 24 mA I B = 120 mA I B =120 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 2.5 V CE = 3 V 25 2 3 4 2.8 18000 1.8 V V V V VF h fe Parallel-diode Forward Voltage Small SignalCurrent Gain V V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BDX87C TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BDX87C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4 |
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